Crystallographic wet chemical etching of GaN
- 2 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (18), 2654-2656
- https://doi.org/10.1063/1.122543
Abstract
We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H3PO4, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄ 1̄}, {101̄ 2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope. The activation energy is 21 kcal/mol, indicative of reaction-rate limited etching.Keywords
This publication has 16 references indexed in Scilit:
- Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etchingApplied Physics Letters, 1998
- Realization and optical characterization of etched mirror facets in GaN cavitiesApplied Physics Letters, 1998
- Deep ultraviolet enhanced wet chemical etching of gallium nitrideApplied Physics Letters, 1998
- Smooth n-type GaN surfaces by photoenhanced wet etchingApplied Physics Letters, 1998
- Effect of dry etching on surface properties of III-nitridesJournal of Electronic Materials, 1997
- Implantation and Dry Etching of Group-III-Nitride SemiconductorsMRS Bulletin, 1997
- Photoassisted Anodic Etching of Gallium NitrideJournal of the Electrochemical Society, 1997
- The dry etching of group III-nitride wide-bandgap semiconductorsJOM, 1996
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996