Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (9), 410-412
- https://doi.org/10.1109/edl.1987.26677
Abstract
The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion. This original method of transistor operation offers excellent device performance, in particular great increases in subthreshold slope, transconductance, and drain current. A simulation program and experiments on SIMOX structures are used to study the new device.Keywords
This publication has 3 references indexed in Scilit:
- Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface propertiesJournal of Applied Physics, 1987
- Deep depleted SOI MOSFETs with back potential control: A numerical simulationSolid-State Electronics, 1985
- Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gateSolid-State Electronics, 1984