Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectors
- 1 June 2005
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 34 (6), 905-908
- https://doi.org/10.1007/s11664-005-0040-6
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Inverted band structure of type-IIIHgTe/Hg1−xCdxTesuperlattices and its temperature dependencePhysical Review B, 2003
- Ellipsometry: a technique for real time monitoring and analysis of MBE-grown CdHgTe and CdTe/HgTe superlatticesJournal of Crystal Growth, 1992
- A high quantum efficiency i n s i t u doped mid-wavelength infrared p-on-n homojunction superlattice detector grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Electron transport and cyclotron resonance in [211]-oriented HgTe–CdTe superlatticesJournal of Vacuum Science & Technology A, 1990
- Type III - Type I transition and strain-effect in Hg1−xCdxTeCdTe and Hg1−xZnxTeCdTe superlatticesSuperlattices and Microstructures, 1988
- Hg incorporation in CdTe during the growth of HgTe-CdTe superlattices by molecular beam epitaxyApplied Physics Letters, 1987
- Experimental relation between cut-off wavelength and HgTe layer thickness for HgTe-CdTe superlatticesApplied Physics Letters, 1986
- Advantages of the HgTe-CdTe superlattice as an infrared detector materialApplied Physics Letters, 1983
- CdTe-HgTe multilayers grown by molecular beam epitaxyApplied Physics Letters, 1982
- The CdTe/HgTe superlattice: Proposal for a new infrared materialApplied Physics Letters, 1979