The CdTe/HgTe superlattice: Proposal for a new infrared material
- 15 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (10), 663-665
- https://doi.org/10.1063/1.90629
Abstract
We propose a new material which could be useful in a number of infrared optoelectronic devices. The material consists of alternating (100) layers of CdTe and HgTe. The band gap of this superlattice is adjustable from 0 to 1.6 eV depending on the thicknesses of the CdTe and HgTe layers. Details of the band‐gap variation and the character of the band‐edge states are presented.Keywords
This publication has 10 references indexed in Scilit:
- Optical absorption of In1−xGaxAsGaSb1−yAsy superlatticesSolid State Communications, 1978
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978
- Tight-binding study of the electronic structure of the InAs–GaSb (001) superlatticeJournal of Vacuum Science and Technology, 1978
- Two-dimensional electronic structure in InAs-GaSb superlatticesSolid State Communications, 1978
- Band Structure of AlAs-GaAs(100) SuperlatticesPhysical Review Letters, 1977
- A new semiconductor superlatticeApplied Physics Letters, 1977
- The properties and applications of the Hg1−xCdxTe alloy systemPublished by Springer Science and Business Media LLC ,1976
- The Band Structures of Alloy System Hg1-xCdxTe Calculated by the Psedopotential MethodJournal of the Physics Society Japan, 1971
- Relativistic Corrections to the Band Structure of Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1963
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954