Electronic defect states at ultrathin SiO2/Si interfaces from photoelectron yield spectroscopy
- 31 July 1999
- journal article
- Published by Elsevier BV in Materials Science in Semiconductor Processing
- Vol. 2 (2), 185-190
- https://doi.org/10.1016/s1369-8001(99)00013-x
Abstract
No abstract availableKeywords
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