The valence band alignment at ultrathin SiO2/Si interfaces
Open Access
- 1 February 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (3), 1606-1608
- https://doi.org/10.1063/1.363895
Abstract
High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interfaceKeywords
This publication has 12 references indexed in Scilit:
- Quantitative Analysis of Tunneling Current through Ultrathin Gate OxidesJapanese Journal of Applied Physics, 1995
- Determination of Valence Band Alignment at Ultrathin SiO2/Si Interfaces by High-Resolution X-Ray Photoelectron SpectroscopyJapanese Journal of Applied Physics, 1995
- CONCAVE-DMOSFET: A New Super-Low On-Resistance Power MOSFETJapanese Journal of Applied Physics, 1995
- Optical absorption in ultrathin silicon oxide films near the/Si interfacePhysical Review B, 1992
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Evaluation of interface potential barrier heights between ultrathin silicon oxides and siliconJournal of Applied Physics, 1985
- Photoemission measurements of interface barrier energies for tunnel oxides on siliconApplied Physics Letters, 1980
- Oscillations in MOS tunnelingJournal of Applied Physics, 1975
- Potential barriers to electron tunnelling in ultra-thin films of SiO2Solid State Communications, 1974