One-Nanometer-Thick Seed Layer of Unilamellar Nanosheets Promotes Oriented Growth of Oxide Crystal Films
- 20 December 2007
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 20 (2), 231-235
- https://doi.org/10.1002/adma.200701381
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substratesApplied Physics Letters, 2007
- Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substratesApplied Physics Letters, 2006
- Substrates for gallium nitride epitaxyMaterials Science and Engineering: R: Reports, 2002
- Growth of epitaxial anatase (001) and (101) filmsThin Solid Films, 2001
- Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodesNature, 2000
- Epitaxial oxide thin films on Si(001)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metalsApplied Physics Letters, 1996
- Laser deposition of biaxially textured yttria-stabilized zirconia buffer layers on polycrystalline metallic alloys for high critical current Y-Ba-Cu-O thin filmsApplied Physics Letters, 1992
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983