Fabrication of Schottky barrier diodes based on ZnO for flexible electronics
- 2 January 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science: Materials in Electronics
- Vol. 31 (10), 7373-7377
- https://doi.org/10.1007/s10854-019-02736-5
Abstract
No abstract availableKeywords
Funding Information
- Secretaría de Educación Pública (PFCE 2019 DES Técnica)
- AMEXCID (SRE-2016-1-278320)
This publication has 17 references indexed in Scilit:
- Electrical Characterization of Schottky Diodes Based on Inkjet-Printed TiO2 FilmsIEEE Electron Device Letters, 2018
- High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnOIEEE Transactions on Electron Devices, 2018
- Stable inks for inkjet printing of TiO2 thin filmsMaterials Science in Semiconductor Processing, 2018
- Flexible IGZO Schottky diodes on paperSemiconductor Science and Technology, 2017
- Metal oxide semiconductor thin-film transistors for flexible electronicsApplied Physics Reviews, 2016
- Recent Progress in Materials and Devices toward Printable and Flexible SensorsAdvanced Materials, 2016
- Technologies for Printing Sensors and Electronics Over Large Flexible Substrates: A ReviewIEEE Sensors Journal, 2014
- Review of solution-processed oxide thin-film transistorsJapanese Journal of Applied Physics, 2014
- Fabrication and characterization of flexible Ag/ZnO Schottky diodes on polyimide substratesThin Solid Films, 2013
- Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible SubstrateIEEE Electron Device Letters, 2011