High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments
- 24 April 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (5), 990-999
- https://doi.org/10.1109/ted.2006.872362
Abstract
For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated. In particular, through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-on-insulator (SOI) have been examined. In the case of strained Ge MOSFETs on bulk Si, the resulting optimal structure obtained was a UT low-defect 2-nm fully strained Ge epi channel on relaxed Si, with a 4-nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5/spl times/ over bulk Si devices, 2/spl times/ mobility enhancement and >10/spl times/ BTBT reduction over 4-nm strained Ge, and surface channel 50% strained SiGe devices. Strained SiGe MOSFETs having UT (T/sub Ge/2.5/spl times/ over strained silicon directly on insulator (SSDOI; strained to 20% relaxed SiGe) devices, and >1.5/spl times/ over 60% strained SiGe (on relaxed bulk Si) devices.Keywords
This publication has 12 references indexed in Scilit:
- High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: SimulationsIEEE Transactions on Electron Devices, 2006
- Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 2004
- TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1−x Gex Dual Channel pMOSFETs on (001) Relaxed Si1−y GeyJournal of Computational Electronics, 2004
- Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETsPublished by Springer Science and Business Media LLC ,2004
- Channel design and mobility enhancement in strained germanium buried channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Ultrathin body sige-on-insulator pmosfets with high-mobility sige surface channelsIEEE Transactions on Electron Devices, 2003
- Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloysJournal of Applied Physics, 1996
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986