High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations
- 24 April 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (5), 1000-1009
- https://doi.org/10.1109/ted.2006.872367
Abstract
Large band-to-band tunneling (BTBT) leakage currents can ultimately limit the scalability of high-mobility (small-bandgap) materials. This paper presents a novel heterostructure double-gate FET (DGFET) that can significantly reduce BTBT leakage currents while retaining its high mobility, making it suitable for scaling into the sub-20-nm regime. In particular, through one-dimensional Poisson-Schrodinger, full-band Monte Carlo, and detailed BTBT simulations, the tradeoffs between carrier transport, electrostatics, and BTBT leakage in high-mobility sub-20-nm Si-strained SiGe-Si (high germanium concentration) heterostructure PMOS DGFETs are thoroughly analyzed. The results show a dramatic (>100/spl times/) reduction in BTBT and an excellent electrostatic control of the channel while maintaining very high drive currents and switching frequencies in these nanoscale transistors.Keywords
This publication has 15 references indexed in Scilit:
- TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1−x Gex Dual Channel pMOSFETs on (001) Relaxed Si1−y GeyJournal of Computational Electronics, 2004
- Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETsPublished by Springer Science and Business Media LLC ,2004
- Channel design and mobility enhancement in strained germanium buried channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Epitaxial silicon and germanium on buried insulator heterostructures and devicesApplied Physics Letters, 2003
- Ultrathin body sige-on-insulator pmosfets with high-mobility sige surface channelsIEEE Transactions on Electron Devices, 2003
- Hierarchical Device SimulationPublished by Springer Science and Business Media LLC ,2003
- Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloysJournal of Applied Physics, 1996
- Absorption and emission of light in nanoscale silicon structuresPhysical Review Letters, 1994
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Theory of TunnelingJournal of Applied Physics, 1961