Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
- 15 September 1989
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (9), 6149-6162
- https://doi.org/10.1103/physrevb.40.6149
Abstract
We report a systematic study of the segregation of third-column elements involved in group III-V arsenide structures to their (100) surface. The surface composition is obtained by in situ electron spectroscopies, on special structures built by molecular-beam epitaxy. In ternary alloys, an important surface enrichment in one of the third-column components is most often observed, leading to a near-binary surface. Heterojunctions between two given binary materials A and B are abrupt or not in composition, depending on the growth sequence (A grown on B or B grown on A): for one sequence, the top monolayer of the base material is gradually distributed in the growing overlayer. All these behaviors can be summarized by tendencies to surface segregation following In>Ga≥Al, and by segregation efficiencies that are either near zero or near unity depending on the way structures are built. The application of standard models to the segregation isotherms for ternary alloys yields segregation energies of 0.1–0.2 eV. The physical origin for the segregation process and its consequences on interface roughness along the growth axis are discussed.Keywords
This publication has 36 references indexed in Scilit:
- High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxyApplied Physics Letters, 1988
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- Interdiffusion of Al and Ga in (Al,Ga)As/GaAs superlatticesJournal of Vacuum Science & Technology B, 1987
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Growth of a novel InAs-GaAs strained layer superlattice on InPApplied Physics Letters, 1985
- Thermal Stability of a Short Period AlAs/n-GaAs SuperlatticeJapanese Journal of Applied Physics, 1985
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- Photoemission studies of(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1982