Growth of a novel InAs-GaAs strained layer superlattice on InP
- 15 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (6), 569-571
- https://doi.org/10.1063/1.95542
Abstract
Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.Keywords
This publication has 5 references indexed in Scilit:
- Electron mobilities in In0.2Ga0.8As/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxyApplied Physics Letters, 1982