High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation
Top Cited Papers
- 6 November 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (12), 1497-1499
- https://doi.org/10.1109/led.2013.2286090
Abstract
We report an in situ low-damage pre-gate treatment technology in an atomic layer deposition (ALD) system prior to the ALD- Al2O3 deposition, to realize high-quality Al2O3/III-nitride (III-N) interface. The technology effectively removes the poor quality native oxide on the III-N surface while forming an ultrathin monocrystal-like nitridation interlayer (NIL) between Al2O3 and III-N surface. With the pre-gate treatment technology, high-performance Al2O3(NIL)/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors are demonstrated, exhibiting well-behaved electrical characteristics including suppressed gate leakage current, a small subthreshold slope of ~64 mV/dec, and a small hysteresis of ~0.09 V.Keywords
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