The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H–SiC
- 1 June 2002
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 194 (1-4), 127-130
- https://doi.org/10.1016/s0169-4332(02)00111-3
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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