Investigation of radiation damage in ion implanted and annealed SiC layers
- 1 December 1995
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 106 (1-4), 339-345
- https://doi.org/10.1016/0168-583x(96)80027-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- High temperature ion implantation of silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Polytype transitions in ion implanted silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Ion implantation effects in silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Comparative study of implantation-induced damage in GaAs and Ge: Temperature and flux dependenceApplied Physics Letters, 1991
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering B, 1988
- Axial dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Axial dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Axial dechanneling: I. Perfect crystalNuclear Instruments and Methods in Physics Research, 1983
- Investigations of Radiation Damage Production in Ion Implanated Siliconphysica status solidi (a), 1982
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970