Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6), 1841-1847
- https://doi.org/10.1109/23.819163
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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