The energy levels and the defect signature of sulfur-implanted silicon by thermally stimulated measurements
- 31 July 1978
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 21 (7), 953-955
- https://doi.org/10.1016/0038-1101(78)90293-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Infrared Absorption Spectrum of Sulfur-Doped SiliconPhysical Review Letters, 1962
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