Determination of deep energy levels in Si by MOS techniques
- 1 October 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (7), 329-331
- https://doi.org/10.1063/1.1654399
Abstract
Ions are implanted into a Si–SiO2 interface. If the distribution is several hundred angstroms wide, the ions create interface states at energies corresponding to their bulk levels. With most elements investigated, agreement with previous data is good. Energy levels of the elements Se, Be, Cd, Sn, Ti, Pb, S, C, Ba, Ta, V, Mn, Cs, and Ge were determined by the MOS technique.This publication has 6 references indexed in Scilit:
- Interface states in SiSiO2 interfacesSolid-State Electronics, 1972
- Determination of deep levels in semiconductors from C-V measurementsIEEE Transactions on Electron Devices, 1972
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- FREEZE-OUT CHARACTERISTICS OF THE MOS VARACTORApplied Physics Letters, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967