Moderate inversion model of ultrathin double-gate nMOS/SOI transistors
- 1 January 1995
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 38 (1), 171-176
- https://doi.org/10.1016/0038-1101(94)e0035-d
Abstract
No abstract availableKeywords
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