Velocity saturation in few-layer MoS2 transistor

2 December 2013

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 103 (23), 233509
https://doi.org/10.1063/1.4840175

Abstract

In this work, we perform an experimental investigation of the saturation velocity in MoS₂ transistors. We use a simple analytical formula to reproduce experimental results and to extract the saturation velocity and the critical electric field. Scattering with optical phonons or with remote phonons may represent the main transport-limiting mechanism, leading to saturation velocity comparable to silicon, but much smaller than that obtained in suspended graphene and some III–V semiconductors.

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