Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Abstract

The performance limits of monolayer transition metal dichalcogenide ( MX₂) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX₂. We find the lattice structures of monolayer MX₂ remain the same as the bulk MX₂. Within the ballistic regime, the performances of monolayer MX₂ transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX₂ promising 2-D materials for future nanoelectronic device applications.