Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method
- 1 May 2010
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 49 (5R)
- https://doi.org/10.1143/jjap.49.056507
Abstract
Thermally grown NiO x and Cu-doped NiO x (Cu:NiO x ) thin films were fabricated as resistive layers for Cu/NiO x /Pt and Cu/Cu:NiO x /Pt devices and their resistive switching properties were investigated. The two devices had reversible resistive switching properties, nondestructive readout, and long retention. However, the Cu/NiO x /Pt device had large voltage dispersions in the resistive switching operation. This work improved the voltage dispersions of the resistive switching operation by Cu-doping in the NiO x thin film. The operating voltages of the Cu/Cu:NiO x /Pt device were also smaller than those of the Cu/NiO x /Pt device. This study suggests the conducting filament model to explain resistive switching behavior and improved resistive switching dispersions. The Cu-doping method produced more defects within the NiO x thin film, which improved voltage dispersion and decreased operation voltages.Keywords
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