1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 3 (3), 937-942
- https://doi.org/10.1109/2944.640647
Abstract
No abstract availableKeywords
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