1.3 μm InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin-film transfer

Abstract

A new thin-film transfer technique has been developed that eliminates the handling of fragile, free-standing films. This process was used to demonstrate the first long wavelength laser fabricated on a host substrate by a thin-film transfer technique. Ridge waveguide lasers operating at a wavelength of 1.3 μm were fabricated on both GaAs and silicon substrates. The light-current characteristics of these transferred lasers were comparable to conventional lasers.