Three-Dimensional Quantum Well Effects in Ultrafine Silicon Particles
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A), L2207
- https://doi.org/10.1143/jjap.27.l2207
Abstract
The mostly crystallized Si:H having a wide optical band gap and showing a visible photoluminescence at room temperature, has been fabricated by means of a planar magnetron rf sputtering technique in hydrogen gas onto a low temperature (about 100 K) substrate. The materials consist of very small crystalline silicon particles (average diameters: 2–5 nm) surrounded by =SiH2 groups. The observed macroscopic physical properties are explained by the three-dimensional quantum size effects in the ultrafine silicon particles.Keywords
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