Dissolved Intermediates in Ammonothermal Crystal Growth: Stepwise Condensation of [Ga(NH2)4]− toward GaN
- 11 August 2017
- journal article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 17 (9), 4855-4863
- https://doi.org/10.1021/acs.cgd.7b00815
Abstract
No abstract availableFunding Information
- Deutsche Forschungsgemeinschaft (FOR1600)
This publication has 37 references indexed in Scilit:
- Chemistry of Ammonothermal SynthesisInorganics, 2014
- Technology of Gallium Nitride Crystal GrowthPublished by Springer Science and Business Media LLC ,2010
- Status and Future of High-Power Light-Emitting Diodes for Solid-State LightingJournal of Display Technology, 2007
- Vapor Pressures, Critical Parameters, Boiling Points, and Triple Points of Ammonia and TrideuteroammoniaJournal of Physical and Chemical Reference Data, 2004
- Substrates for gallium nitride epitaxyMaterials Science and Engineering: R: Reports, 2002
- Group-III-Nitride Based Gas Sensing Devicesphysica status solidi (a), 2001
- Growth and applications of Group III-nitridesJournal of Physics D: Applied Physics, 1998
- GaN Synthesis by Ammonothermal MethodActa Physica Polonica A, 1995
- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983
- Ammonothermalsynthese von Magnesium- und BerylliumamidAngewandte Chemie, 1966