Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
- 16 June 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (24), 1620-1623
- https://doi.org/10.1103/physrevlett.44.1620
Abstract
A highly precise method for locating the valence-band edge in x-ray photoemission spectra is reported. The application to measuring semiconductor interface potentials is discussed. X-ray photoemission-spectroscopy experiments on Ge and GaAs(110) crystals have given Ge , Ga , and As core level to valence-band edge binding-energy differences of 29.55, 18.81, and 40.73 eV to a precision of ±0.02 eV. For illustration, the valence-band discontinuity at an abrupt Ge/GaAs(110) heterojunction is determined to be 0.53±0.03 eV.
Keywords
This publication has 9 references indexed in Scilit:
- Core-Level Binding Energy and Density of States from the Surface Atoms of GoldPhysical Review Letters, 1978
- XPS measurements of abrupt Ge–GaAs heterojunction interfacesJournal of Vacuum Science and Technology, 1978
- Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAsPhysical Review Letters, 1978
- High resolution X-ray spectroscopy using synchrotron radiation: Source characteristics and optical systemsJournal of Electron Spectroscopy and Related Phenomena, 1977
- Many-body processes in x-ray photoemission line shapes from Li, Na, Mg, and Al metalsPhysical Review B, 1977
- LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surfaceSurface Science, 1977
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Determination of the Gaussian and Lorentzian content of experimental line shapesReview of Scientific Instruments, 1974
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965