Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″–4″ gallium arsenide crystals
- 1 March 1999
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 198-199, 349-354
- https://doi.org/10.1016/s0022-0248(98)00996-8
Abstract
No abstract availableKeywords
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