Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- 1 December 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (12B), L1648
- https://doi.org/10.1143/jjap.35.l1648
Abstract
The structural and morphological evolution of GaN films grown by MOCVD at high temperature (1080°C) on a low temperature grown GaN nucleation layer (NL) on (0001) sapphire were studied using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The high temperature (HT) GaN layers were found to grow by initially forming isolated truncated hexagonal islands having {10*BAR*1*BAR*1} facet planes and a top (0001) plane. The non-wetting or partial wetting behavior of the HT GaN on the GaN NL is attributed to both the roughness and predominantly cubic nature of the NL.Keywords
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