Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress
- 5 October 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 64 (11), 4435-4441
- https://doi.org/10.1109/ted.2017.2754248
Abstract
The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high VDS,stress and high IDstress electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the creation of an anomalous source-side gate leakage path has been identified. We attribute this to high electric-field induced trap generation in the AlN layer directly under the gate edge on the source side. The resulting increase in gate leakage further exacerbates the degradation of the gate diode. In addition, we postulate that high-power stress leads to significant device self-heating that causes gate sinking and leads to a permanent positive threshold voltage shift and drain current degradation.Keywords
Funding Information
- National Reconnaissance Office (DII NRO000-13C0309)
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