Transmission electron microscopy study of Si nanowires
- 3 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (5), 677-679
- https://doi.org/10.1063/1.121945
Abstract
Microstructures of Si nanowires (SiNW’s) synthesized using laser ablation were investigated by transmission electron microscopy. The SiNW’s have a high density of structural defects, which may play an important role in the formation of SiNW’s and in the determination of the morphology of the nanowires. A model for the growth mechanism of the SiNW’s was discussed on the basis of the observation.Keywords
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