Microstructural origin of leakage current in GaN/InGaN light-emitting diodes
- 1 March 2004
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 264 (1-3), 172-177
- https://doi.org/10.1016/j.jcrysgro.2004.01.031
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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