Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (8), 409-411
- https://doi.org/10.1109/55.225595
Abstract
Indium has been used as an alternative channel implant in submicrometer-channel Si MOSFETs in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to 0.17- mu m channel length. The device characteristics have been compared to those of uniform boron-implanted short-channel MOSFETs used in a 0.25- mu m CMOS technology. Results indicate that NMOSFETs with nonuniform channel doping obtained with indium have superior short-channel effect (SCE) when compared to NMOSFETs with uniformly (boron) doped channel.<>Keywords
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