Effect of temperature on the Ge/GaAs(110) interface formation
- 2 September 1983
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 132 (1-3), 505-512
- https://doi.org/10.1016/0039-6028(83)90556-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The electronic structure of Ge:GaAs(110) interfacesJournal of Vacuum Science and Technology, 1982
- Room-temperature formation of the Ag/GaAs (110) interfaceJournal of Physics C: Solid State Physics, 1982
- Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with AgPhysical Review B, 1981
- Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructuresJournal of Vacuum Science and Technology, 1980
- Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsPhysical Review Letters, 1980
- Ge–GaAs(110) interface formationJournal of Vacuum Science and Technology, 1978