Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
- 23 September 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 23 (23), 1751-1753
- https://doi.org/10.1109/lpt.2011.2169052
Abstract
In this letter, a GeSn light-emitting pin diode integrated on Si via a Ge buffer is demonstrated and it is compared with a light-emitting pin diode made from pure, unstrained Ge on Si. The diode layer structures are grown with a special low-temperature molecular beam epitaxy process. The pseudomorphic GeSn layers (1.1% Sn content) on the Ge buffer are compressively strained. Both light-emitting pin diodes clearly show direct bandgap electroluminescence emission at room temperature. The electroluminescence peak of the GeSn light-emitting pin diode is shifted by 20 meV into the infrared region compared to the electroluminescence peak of the unstrained Ge light-emitting pin diode. The shift is due to the lower bandgap of GeSn and the influence of strain.Keywords
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