ICB deposition of almost perfect large single crystal Al films on silicon substrate
- 1 February 1989
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 770-774
- https://doi.org/10.1016/0168-583x(89)90295-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Formation mechanism of large clusters from vaporized solid materialThe Journal of Physical Chemistry, 1987
- Metallization by ionized cluster beam depositionIEEE Transactions on Electron Devices, 1987
- Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam DepositionJapanese Journal of Applied Physics, 1985
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984