Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beam

Abstract

Epitaxial Al films were deposited on clean Si(111) and Si(100) by ionized-cluster beam at room temperature. Crystalline orientation was studied by reflection electron diffraction during and after the deposition of the 360-nm-thick Al films. Ion channeling spectra, optical reflectance spectra, and scanning electron micrographs were taken to evaluate the properties of the deposited films and to elucidate the effects of acceleration of ionized clusters. It was found that the films did not give rise to hillock and alloy penetration at the interface after 450 °C thermal treatment.