In Situ Quartz Crystal Microbalance and Quadrupole Mass Spectrometry Studies of Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum and Water
- 18 September 2001
- journal article
- research article
- Published by American Chemical Society (ACS) in Langmuir
- Vol. 17 (21), 6506-6509
- https://doi.org/10.1021/la010103a
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen SourcesScience, 2000
- High-resolution depth profiling in ultrathin Al2O3 films on SiApplied Physics Letters, 2000
- Formation of Very Thin Epitaxial Al2O3 Pre-layer with Very Smooth Surface on Si (111) Using a Protective Oxide LayerJapanese Journal of Applied Physics, 1999
- Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer DepositionChemical Vapor Deposition, 1999
- Advanced ALE processes of amorphous and polycrystalline filmsApplied Surface Science, 1997
- Surface reactions in Al2O3 growth from trimethylaluminium and water by atomic layer epitaxyApplied Surface Science, 1996
- Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistryApplied Surface Science, 1996
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996
- Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applicationsMaterials Science and Engineering B, 1996
- Atomic layer epitaxyMaterials Science Reports, 1989