RF Sputtered Low-Resistivity and High-Transmittance Indium Gallium Zinc Oxide Films for Near-UV Applications
- 1 January 2011
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 14 (3), H132-H134
- https://doi.org/10.1149/1.3529877
Abstract
Indium gallium zinc oxide (IGZO) films were deposited on glass substrates by co-sputtering and targets. The structural, electrical, and optical properties of the IGZO films are investigated as functions of substrate temperature and radio frequency (rf) power supplied to the target . The X-ray diffraction patterns show that the deposited IGZO films are amorphous in nature. The IGZO films have the lowest resistivity of with an In content of 24.56 atom % at substrate temperature. The optical transmittance at exceeds 80% for all samples.Keywords
This publication has 10 references indexed in Scilit:
- Stable room temperature deposited amorphous InGaZnO4 thin film transistorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2008
- Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculationsPhysical Review B, 2007
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperatureJournal of Vacuum Science & Technology A, 2006
- Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film TransistorsJapanese Journal of Applied Physics, 2006
- Beneficial effects of sputtered ZnO:Al protection layer on SnO2:F for high-deposition rate hot-wire CVD p–i–n solar cellsThin Solid Films, 2006
- Review on material properties of IZO thin films useful as epi-n-TCOs in opto-electronic (SIS solar cells, polymeric LEDs) devicesMaterials Science and Engineering B, 2006
- Transparent indium zinc oxide top cathode prepared by plasma damage-free sputtering for top-emitting organic light-emitting diodesApplied Physics Letters, 2006
- A study of conduction in the transition zone between homologous and ZnO-rich regions in the In2O3–ZnO systemJournal of Applied Physics, 2005
- InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contactsSolid-State Electronics, 2003