Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations
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- 18 January 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 75 (3), 035212
- https://doi.org/10.1103/physrevb.75.035212
Abstract
Ionic amorphous oxide semiconductors (IAOSs) are new materials for flexible thin film transistors that exhibit field-effect mobilities of [K. Nomura et al., Nature 488, 432 (2004)]. The local coordination structure in an IAOS, In-Ga-Zn-O (-IGZO), was examined using extended x-ray absorption fine structure analysis combined with ab initio calculations. The short-range ordering and coordination structures in -IGZO are similar to those in the corresponding crystalline phase, , and edge-sharing structures consisting of In-O polyhedra remain in the amorphous structure. The orbitals form an extended state with a band effective mass of at the conduction band bottom.
Keywords
This publication has 19 references indexed in Scilit:
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Ionic amorphous oxide semiconductors: Material design, carrier transport, and device applicationJournal of Non-Crystalline Solids, 2006
- Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film TransistorsJapanese Journal of Applied Physics, 2006
- High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layerApplied Physics Letters, 2005
- A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction DiodesAdvanced Materials, 2003
- Electronic structure and transport properties in the transparent amorphous oxide semiconductorPhysical Review B, 2002
- Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductorPhilosophical Magazine Part B, 2001
- Electronic transport and optical properties of proton-implanted amorphous 2CdO·GeO2 filmsJournal of Non-Crystalline Solids, 2000
- Novel oxide amorphous semiconductors: transparent conducting amorphous oxidesJournal of Non-Crystalline Solids, 1996
- Silicon dioxide and the chalcogenide semiconductors; similarities and differencesAdvances in Physics, 1977