RF transistors: Recent developments and roadmap toward terahertz applications
- 31 August 2007
- journal article
- review article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 51 (8), 1079-1091
- https://doi.org/10.1016/j.sse.2007.05.020
Abstract
No abstract availableKeywords
This publication has 47 references indexed in Scilit:
- The rise of grapheneNature Materials, 2007
- The influence of collector designs on fmax versus ft characteristics for different types of Si-based RF bipolar transistorsSemiconductor Science and Technology, 2006
- A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$IEEE Electron Device Letters, 2006
- Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo resultsMicroelectronic Engineering, 2006
- Advanced CMOS Technology Portfolio for RF IC ApplicationsIEEE Transactions on Electron Devices, 2005
- High-Frequency Solid-State Electronic DevicesIEEE Transactions on Electron Devices, 2005
- In Search of “Forever,” Continued Transistor Scaling One New Material at a TimeIEEE Transactions on Semiconductor Manufacturing, 2005
- AC performance of nanoelectronics: towards a ballistic THz nanotube transistorSolid-State Electronics, 2004
- SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication ApplicationsIEEE Transactions on Microwave Theory and Techniques, 2004
- Reverse modeling of E/D logic submicrometer MODFETs and prediction of maximum extrinsic MODFET current gain cutoff frequencyIEEE Transactions on Electron Devices, 1990