The influence of collector designs on fmax versus ft characteristics for different types of Si-based RF bipolar transistors
- 30 November 2006
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 22 (1), S76-S79
- https://doi.org/10.1088/0268-1242/22/1/s18
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistorsphysica status solidi (c), 2006