Electrical compensation by Ga vacancies in Ga2O3 thin films
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- 15 June 2015
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 106 (24)
- https://doi.org/10.1063/1.4922814
Abstract
The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.Peer revieweKeywords
Funding Information
- Suomen Akatemia
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