Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
- 1 November 2008
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 47 (11R)
- https://doi.org/10.1143/jjap.47.8506
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Reconstruction of the β-Ga2O3 (100) cleavage surface to hexagonal GaN after NH3nitridationJournal of Crystal Growth, 2004
- Large-size β-Ga2O3 single crystals and wafersJournal of Crystal Growth, 2004
- Applications and Processing of Transparent Conducting OxidesMRS Bulletin, 2000
- Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3Journal of Applied Physics, 1999
- Growth of TiO2 Plate Single Crystals by the Edge-Defined, Film-Fed Growth ProcessJapanese Journal of Applied Physics, 1992
- Factors influencing surface quality and impurity distribution in silicon ribbons grown by the capillary action shaping technique (CAST)Journal of Crystal Growth, 1980
- Growth of controlled profile crystals from the melt: Part III — TheoryMaterials Research Bulletin, 1971
- Growth of controlled profile crystals from the melt: Part I - Sapphire filamentsMaterials Research Bulletin, 1971
- Synthesis and structure of phases in the In2O3Ga2O3 systemJournal of Inorganic and Nuclear Chemistry, 1968
- Polymorphism of Ga2O3 and the System Ga2O3—H2OJournal of the American Chemical Society, 1952