Experimental Study of the Solid SolutionsTixTa1xS2

Abstract
We have found that the substitutional replacement of Ti for Ta in TaS2 stabilizes the octahedral 1T phase for x between 0.1 and 0.9. A comparison of the resistivity, magnetic susceptibility, and thermoelectric power shows that at room temperature the properties vary systematically from diamagnetic, semiconducting behavior for 1TTaS2 to paramagnetic, metallic behavior for TiS2. This interpretation of the data contradicts all previous models which treat TiS2 as a degenerate semiconductor.