High temperature operation of α-silicon carbide buried-gate junction field-effect transistors

Abstract

The high temperature operation of α-SiC buried-gate junction field-effect transistors is reported. Devices fabricated with a 4 μm gate length have a maximum transconductance of 17mS/mm and a maximum drain saturation current of 450mA/mm at room temperature. The devices are completely pinched off at a gate voltage of −40 V. Devices with a gate length of 39 μm have a transconductance of 5.4mS/mm at room temperature which decreases to 1.7mS/mm at 400°C. This decrease in transconductance is due to the reduction of mobility with increasing temperature. The values of transconductances at room temperature and at elevated temperatures are the highest reported for α-SiC JFETs.