A High Transconductance β-SiC Buried-Gate Junction Field Effect Transistor
- 1 January 1989
- book chapter
- conference paper
- Published by Springer Science and Business Media LLC in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
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- An adequate structure for power microwave FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Avalanche Breakdown in Epitaxial SiC p-n JunctionsJournal of Applied Physics, 1969