p -channel thin-film transistor using p-type oxide semiconductor, SnO

Abstract

This paper reports that among known $p$ -type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good $p$ -type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at $575°\mathrm{C}$ by pulsed laser deposition. These exhibited a Hall mobility of $2.4{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of $1.3{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ , on/off current ratios of $\sim {10}^2$ , and threshold voltages of $4.8\mathrm{V}$ .