Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O
- 1 November 2007
- journal article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 15 (11), 915-921
- https://doi.org/10.1889/1.2812992
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Fast Thin-Film Transistor Circuits Based on Amorphous Oxide SemiconductorIEEE Electron Device Letters, 2007
- Integrated Circuits Based on Amorphous Indium-Gallium-Zinc-Oxide-Channel Thin-Film TransistorsECS Transactions, 2006
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Transparent ring oscillator based on indium gallium oxide thin-film transistorsSolid-State Electronics, 2006
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Fast polymer integrated circuitsApplied Physics Letters, 2002
- Self-alignment processed amorphous silicon ring oscillatorsIEEE Electron Device Letters, 1984