Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

Abstract

We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of $(1\pm 0.3)\times {10}^{-29}{\text{cm}}^6{\mathrm{s}}^{-1}$ at 450 nm and $(3\pm 1)\times {10}^{-30}{\text{cm}}^6{\mathrm{s}}^{-1}$ at 520 nm.